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 FAN7385 Dual-Channel High-Side Gate-Drive IC
February 2007
FAN7385 Dual-Channel High-Side Gate-Drive IC
Features
Floating Channel for Bootstrap Operation to +600V Typically 350mA/650mA Sourcing/Sinking Current Driving Capability Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output In-Phase of Input Signal VDD & VBS Supply Range from 10V to 20V 3.3V and 5V Input Logic Compatible Built-in Common Mode dv/dt Noise Canceling Circuit Built-in UVLO Functions for Both Channels
Description
The FAN7385 is a monolithic high side gate drive IC designed for high voltage, high speed driving MOSFETs and IGBTs operating up to +600V. Fairchild's high-voltage process and common-mode noise canceling technique provide stable operation of high-side drivers under high-dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS = -9.8V (typical) for VBS = 15V. The UVLO circuits prevent malfunction when VBS1 and VBS2 are lower than the specified threshold voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for dual high-side switches and half-bridge inverters. 14-SOP
Applications
Normal Half-Bridge and Full-Bridge Driver PDP Energy Recovery Switch Control Driver Switching Mode Power Supply
1
Ordering Information
Part Number
FAN7385M
(1) (1)
Package
14-SOP
Pb-Free
Yes
Operating Temperature Range
-40C ~ 125C
Packing Method
Tube Tape & Reel
FAN7385MX
Note: 1. These devices passed wave soldering test by JESD22A-111.
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2
www.fairchildsemi.com
FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Application Diagrams
VS
RBOOT DBOOT1 Q3
FAN7385
15V
1 VDD NC VB1 14 2 HO1 13
D3
L1 D1
To Pannel
Q4
CBOOT1
D2 D4
IN1
3
IN1 NC
VS1 NC
12
4
11
DBOOT2 Q1 Q2 Buffer IC
IN2 C1
5
IN2
VB2
10
6
NC GND
HO2 VS2
9 8
7
CBOOT2
HVIC
C2 FAN7380 FAN7382
Energy Recovery
Sustain Driver
FAN7385 Rev.01
Figure 1. Floated Bidirectional Switch Control for PDP application
RBOOT1
DBOOT1
VDC
Full-Bridge Converter
15V
1 VDD NC VB1 14 HO1
2
13
CBOOT1
3 IN1 NC VS1 NC 12
4
11
5
IN2
VB2
10
C1
6
NC GND
HO2 VS2
9 8
Load
CBOOT2
7
Controller
RBOOT2 DBOOT2
L-CH Output R-CH Output
FAN7385 Rev.01
Figure 2. Full-Bridge Power Supply Application
RBOOT
DBOOT
VDC
Q1
15V
1 VDD NC VB1 14 2 HO1 13
Resonant Converter
CBOOT INPUT1
3 IN1 NC VS1 NC 12
L
C Vout
4
11
INPUT2 C1
5
IN2
VB2
10
Q2
6 NC GND HO2 VS2 9
Co
C2
7 8
FAN7385 Rev.01
Figure 3. Half-Bridge LCC Resonant Converter Application
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 2
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FAN7385 Dual-Channel High-Side Gate-Drive IC
Internal Block Diagram
14
VB1
VDD
1
PULSE GENERATOR
UVLO DRIVER
NOISE CANCELLER
R S
R Q
13
HO1
12
VS1
IN1
3
500K
SCHMITT TRIGGER INPUT
10
UVLO DRIVER
VB2
IN2
5
500K
PULSE GENERATOR
NOISE CANCELLER
R S
R Q
9
HO2
8
VS2
GND
7
Pin 2, 4, 6 and 11 are not connection
FAN7385 Rev.01
Figure 4. Functional Block Diagram
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 3
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FAN7385 Dual-Channel High-Side Gate-Drive IC
Pin Configuration
VDD NC IN1 NC IN2 NC
1 2 3 4 5 6 7
14 13 12
VB1 HO1 VS1 NC VB2 HO2 VS2
FAN7385
11 10 9 8
GND
FAN7385 Rev.00
Figure 5. Pin Configuration (Top View)
Pin Definitions
Pin #
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Name
VDD NC IN1 NC IN2 NC GND VS2 HO2 VB2 NC VS1 HO1 VB1 Power supply Not connection Channel 1 control input Not connection Channel 2 control input Not connection Ground Channel 2 floating supply return Channel 2 output Channel 2 floating supply Not connection Channel 1 floating supply return Channel 1 output Channel 1 floating supply
Description
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 4
www.fairchildsemi.com
FAN7385 Dual-Channel High-Side Gate-Drive IC
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25C, unless otherwise specified.
Symbol
VS VB VHO VDD VIN GND dVS/dt PD(2)(3)(4) JA TJ TS
Parameter
High-side offset voltage VS1 ,VS2 High-side floating supply voltage VB1 ,VB2 High-side floating output voltage HO1, HO2 Low-side and logic-fixed supply voltage Logic input voltage (IN1, IN2) Logic ground Allowable offset voltage slew rate Power dissipation Thermal resistance, junction-to-ambient Junction temperature Storage temperature
Min.
VB-25 -0.3 VS-0.3 -0.3 -0.3 VDD-25
Max.
VB+0.3 625 VB+0.3 25 VDD+0.3 VDD+0.3 50 1.0 110 150 150
Unit
V V V V V V V/ns W C/W C C
Notes:
2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 4. Do not exceed PD under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VB VS VDD VHO VIN TA
Parameter
High-side floating supply voltage High-side floating supply offset voltage Supply voltage High-side (HO1, HO2) output voltage Logic input voltage (IN1, IN2) Ambient temperature
Condition
Min.
VS+10 6-VDD 10 VS GND -40
Max.
VS+20 600 20 VB VDD 125
Unit
V V V V V C
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 5
www.fairchildsemi.com
FAN7385 Dual-Channel High-Side Gate-Drive IC
Electrical Characteristics
VBIAS (VDD, VBS1, VBS2) = 15.0V, TA = 25C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to VS1 and VS2 and are applicable to the respective outputs HO1 and HO2.
Symbol
IQDD IPDD
Characteristics
Quiescent VDD supply current Operating VDD supply current VBS1 and VBS2 supply under-voltage positive going threshold VBS1 and VBS2 supply under-voltage negative going threshold VBS1 and VBS2 supply under-voltage lockout hysteresis Offset supply leakage current Quiescent VBS1 and VBS2 supply current Operating VBS1 and VBS2 supply current High-level output voltage, VBIAS-VO Low-level output voltage, VO Output HIGH short-circuit pulse current Output LOW short-circuit pulsed current Allowable negative VS pin voltage for IN signal propagation to HO Logic "1" input voltage Logic "0" input voltage Logic "1" input bias current Logic "0" input bias current Input pull-down resistance VIN=5V VIN=0V
Condition
VIN1=VIN2=0V or 5V fIN1=fIN2=10kHz, rms value
Min. Typ. Max. Unit
28 35 50 70 A A
SUPPLY CURRENT SECTION
BOOTSTRAPPED POWER SUPPLY SECTION
VBSUV+ VBSUVVBSHYS ILK IQBS1,2 IPBS1,2 VOH VOL IO+ IOVS VBS1=VBS2=Sweep VBS1=VBS2=Sweep VBS1=VBS2=Sweep VB=VS=600V VIN1=0V or 5V fIN1=10kHz, rms value IO=0mA (No Load) IO=0mA (No Load) VO=0V, VIN=5V with PW<10s VO=15V, VIN=0V with PW<10s 250 500 350 650 -9.8 -7.0 50 220 8.2 7.6 9.1 8.5 0.6 10 85 300 30 30 10.2 9.6 V V V A A A mV mV mA mA V
GATE DRIVER OUTPUT SECTION
LOGIC INPUT SECTION (IN1 AND IN2)
VIH VIL IIN+ IINRIN 2.5 1.3 10 400 500 20 2.0 600 V V A A K
Dynamic Electrical Characteristics
TA=25C, VBIAS (VDD, VBS1, VBS2) = 15.0V, VS1 = VS2 = GND, CLoad = 1000pF unless otherwise specified.
Symbol
ton toff tr tf MT
Parameter
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Delay matching, Channel 1 & 2 turnon/off
Conditions
VS=0V VS=0V or 600V(5)
Min.
Typ.
110 110 50 30 0
Max.
180 180 90 70
Unit
ns ns ns ns ns
Notes:
5. This parameter guaranteed by design.
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 6
www.fairchildsemi.com
FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Characteristics
10.00 9.75 9.50 9.25 9.00 8.75 8.50 8.25 8.00 -40 -20 0 20 40 60 80 100 120
9.0 8.8
VBSUVN [V]
VBSUVP [V]
8.6 8.4 8.2 8.0 -40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 6. VBS UVLO (+) vs. Temperature
Figure 7. VBS UVLO (-) vs. Temperature
1.0 0.8
70 60 50
VIN1= VIN2=GND
VBSHYS [V]
0.6 0.4 0.2 0.0 -40
IQDD [A]
-20 0 20 40 60 80 100 120
40 30 20 10 0 -40 -20 0 20 40 60 80 100 120
Temperature [C]
Temperature [C]
Figure 8. VBS UVLO Hysteresis vs. Temperature
Figure 9. VDD Quiescent Current vs. Temperature
70 60 50
VIN1= VIN2=GND
80 70 60
IQBS [A]
40 30 20 10 0 -40 -20 0 20 40 60 80 100 120
IPDD [A]
50 40 30 20 10 -40 -20 0 20 40 60 80 100 120
Temperature [C]
Temperature [C]
Figure 10. VBS Quiescent Current vs. Temperature
Figure 11. VDD Operating Current vs. Temperature
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 7
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FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Characteristics (Continued)
300 275 250 225 200 175 150 125 100 -40 -20 0 20 40 60 80 100 120
20 18 16 14 12 10 8 6 4 2 0 -40
IN+ [A]
IPBS [A]
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 12. VBS Operating Current vs. Temperature
Figure 13. Logic High Input Current vs. Temperature
2.0 1.5 1.0
2.7 2.6 2.5
IN- [A]
VIH [V]
0.5 0.0 -0.5 -1.0 -1.5 -2.0 -40 -20 0 20 40 60 80 100 120
2.4 2.3 2.2 2.1 2.0 -40 -20 0 20 40 60 80 100 120
Temperature [C]
Temperature [C]
Figure 14. Logic Low Input Current vs. Temperature
Figure 15. Logic Input High Voltage vs. Temperature
2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 -40
1000 800
RIN [k]
-20 0 20 40 60 80 100 120
VIL [V]
600 400 200 0 -40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 16. Logic Input Low Voltage vs. Temperature
Figure 17. Logic Input Resistance vs. Temperature
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 8
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FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Characteristics (Continued)
100 90 80 70
80 70 60 50 40 30 20 10 -20 0 20 40 60 80 100 120 0 -40 -20 0 20 40 60 80 100 120
tR [ns]
60 50 40 30 20 10 -40
Temperature [C]
tF [ns]
Temperature [C]
Figure 18. Rising Time vs. Temperature
Figure 19. Falling Time vs. Temperature
180 170 160 140 130 120 110 100 90 -40 -20 0 20 40 60 80 100 120 150
180 170 160 150 140 130 120 110 100 -40 -20 0 20 40 60 80 100 120
Temperature [C]
tOFF [ns]
tON [ns]
Temperature [C]
Figure 20. Turn-On Delay Time vs. Temperature
Figure 21. Turn-Off Delay Time vs. Temperature
20 15 10 -14 -12
MT [ns]
5 0 -5 -10 -15 -40 -20 0 20 40 60 80 100 120
VS [V]
-10 -8 -6 -40 -20 0 20 40 60 80 100 120
Temperature [C]
Temperature [C]
Figure 22. Delay Matching Time vs. Temperature
Figure 23. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature
www.fairchildsemi.com 9
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2
FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Characteristics (Continued)
400 380
750 700
IO+ [V]
340 320 300 -40
IO- [V]
-20 0 20 40 60 80 100 120
360
650 600 550 500 -40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 24. Output High Short-Circuit Pulse Current vs. Temperature
Figure 25. Output Low Short-Circuit Pulse Current vs. Temperature
80 60
80 60
IQDD [A]
40 20 0 0
IPDD [A]
5 10 15 20 25
40 20 0 0
5
10
15
20
Supply Voltage [V]
Supply Voltage [V]
Figure 26. VDD Quiescent Current vs. Supply Voltage
Figure 27. VDD Operating Current vs. Supply Voltage
250 200
80 70 60
IPBS [A]
tR [ns]
5 10 15 20
150 100 50 0 0
50 40 30 20 10 10 11 12 13 14 15 16 17 18 19 20
Supply Voltage [V]
Supply Voltage [V]
Figure 28. VBS Operating Current vs. Supply Voltage
Figure 29. Rising Time vs. Supply Voltage
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 10
www.fairchildsemi.com
FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Characteristics (Continued)
50 40 30 20 10 10
160 150 140 130 120 110 100 90 11 12 13 14 15 16 17 18 19 20 80 10 11 12 13 14 15 16 17 18 19 20
Supply Voltage [V]
tON [ns]
tF [ns]
Supply Voltage [V]
Figure 30. Falling Time vs. Supply Voltage
Figure 31. Turn-On Delay Time vs. Supply Voltage
150 140 130 120 110 100 90 80 10 11 12 13 14 15 16 17 18 19 20
Output Sourcing Current [mA]
160
500 450 400 350 300 250 200 10 11 12 13 14 15 16 17 18 19 20
tOFF [ns]
Supply Voltage [V]
Supply Voltage [V]
Figure 32. Turn-Off Delay Time vs. Supply Voltage
Figure 33. Output Source Current vs. Supply Voltage
Output Sourcing Current [mA]
1000 -4 900 800 700 600 500 400 10 11 12 13 14 15 16 17 18 19 20 -6 -8
VS [V]
-10 -12 -14 -16 10 11 12 13 14 15 16 17 18 19 20
Supply Voltage [V]
Supply Voltage [V]
Figure 34. Output Sink Current vs. Supply Voltage
Figure 35. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Supply Voltage
www.fairchildsemi.com 11
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2
FAN7385 Dual-Channel High-Side Gate-Drive IC
Switching Time Definitions
10F
0.1F
HVIC VDD IN VB
10F 0.1F
50%
50%
15V GND IN IN VS (A) 15V HO
1000pF
ton
tr 90%
toff 90%
tf
OUT
10%
10%
(B)
FAN7385 Rev.00
Figure 36. Switching Time Test Circuit
IN1
IN2
HO1
HO2
FAN7385 Rev.00
Figure 37. Input / Output Waveforms
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 12
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FAN7385 Dual-Channel High-Side Gate-Drive IC
Typical Application Information
1. Under-Voltage Lockout (UVLO)
The FAN7385 has an under-voltage lockout (UVLO) protection circuit to prevent malfunction when VBS1 and VBS2 are lower than the specified threshold voltage. The UVLO circuit monitors the bootstrap capacitor voltages (VBS1, VBS2) independently.
2.2 Gate Drive Loop
Current loops behave like antennae, able to receive and transmit noise. To reduce the noise coupling/emission and improve the power switch turn-on and off performances, gate drive loops must be reduced as much as possible.
2. Layout Consideration
For optimum performance, considerations must be given during printed circuit board (PCB) layout.
2.3 Ground Plane
To minimize noise coupling, avoid placing the ground plane under or near the high-voltage floating side.
2.1 Supply Capacitors
If the output stages are able to quickly turn on a switching device with a high current value, the supply capacitors must be placed as close as possible to the device pins (VDD and GND for the ground-tied supply, VB and VS for the floating supply) to minimize parasitic inductance and resistance.
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 13
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FAN7385 Dual-Channel High-Side Gate-Drive IC
Package Dimensions
14-SOP
Dimensions are in millimeters unless otherwise noted.
MIN 1.55 0.10 0.061 0.004
0.05 0.002
#1
#14
8.70 MAX 0.343
8.56 0.20 0.337 0.008
#7
#8
6.00 0.30 0.236 0.012
1.80 MAX 0.071
+0.10 0.20 -0.05 +0.004 0.008 -0.002
3.95 0.20 0.156 0.008
5.72 0.225 0.60 0.20 0.024 0.008
0~ 8
January 2001, Rev. A 14sop225b_dim.pdf
Figure 38. 14-Lead Small Outline Package (SOP)
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 14
MAX0.10 MAX0.004
1.27 0.050
www.fairchildsemi.com
+0.10 0.406 -0.05 +0.004 0.016 -0.002
(
0.47 ) 0.019
FAN7385 Dual-Channel High-Side Gate-Drive IC
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I23
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2006 Fairchild Semiconductor Corporation FAN7385 Rev. 1.0.2 15
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